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| SI4425BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.012 @ VGS = -10 V 0.019 @ VGS = -4.5 V ID (A) -11.4 -9.1 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches - Notebook PCs - Desktop PCs Pb-free Available S SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4425BDY SI4425BDY--T1 (with Tape and Reel) SI4425BDY--E3 (Lead (Pb)-Free) SI4425BDY-T1--E3 (Lead (Pb)-Free with Tape and Reel) 8 7 6 5 D D D D D P-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State -30 "20 Unit V -11.4 -9.1 -50 -2.1 2.5 1.6 -55 to 150 -8.8 -7.0 A -1.3 1.5 0.9 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72000 S-50366--Rev. D, 28-Feb-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 15 Maximum 50 85 18 Unit _C/W C/W 1 SI4425BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -11.4 A VGS = -4.5 V, ID = -9.1 A VDS = -15 V, ID = -11.4 A IS = -2.5 A, VGS = 0 V -50 0.010 0.015 29 -0.8 -1.2 0.012 0.019 -1.0 -3.0 "100 -1 -5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.5 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -10 V, ID = -11.4 A , , 64 11 17 15 13 100 53 41 25 20 150 80 80 ns 100 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 25_C 0 -55_C 3 4 5 10 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 10 0 1 2 VGS - Gate-to-Source Voltage (V) Document Number: 72000 S-50366--Rev. D, 28-Feb-05 www.vishay.com 2 SI4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 5000 Capacitance VGS = 4.5 V 0.015 VGS = 10 V 0.010 C - Capacitance (pF) 0.020 4000 Ciss 3000 2000 Coss Crss 0.005 1000 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12 A 1.4 6 rDS(on) - On-Resiistance (Normalized) 30 40 50 60 70 80 1.2 4 1.0 2 0.8 0 0 10 20 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.04 ID = 12 A 0.03 I S - Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72000 S-50366--Rev. D, 28-Feb-05 www.vishay.com 3 SI4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 0.2 0.0 -0.2 -0.4 -50 30 25 20 Single Pulse Power, Junction-to-Ambient 15 10 5 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 *rDS(on) Limited Safe Operating Area IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc BVDSS Limited 1 ID(on) Limited 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72000 S-50366--Rev. D, 28-Feb-05 SI4425BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72000. Document Number: 72000 S-50366--Rev. D, 28-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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